View BB301CAW-TL-E_4676329.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BB301C
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
REJ03G0823-0300 (Previous ADE-208-507A) Rev.3.00 Aug.10.2005
Features
* Built in Biasing Circuit; To reduce using parts cost & PC board space. * Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) * Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. * Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4)
2 3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
Notes :
1. Marking is "AW-". 2. BB301C is individual type number of RENESAS BBFET.
Rev.3.00 Aug 10, 2005 page 1 of 7
BB301C
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 -0 6 25 100 150 -55 to +150 Unit V V V mA mW C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) VG2S(off) ID(op) |yfs| Ciss Coss Crss PG NF Min 6 +6 6 -- -- 0.4 0.4 10 15 2.2 0.9 -- 22 -- Typ -- -- -- -- -- -- -- 15 20 3.0 1.2 0.018 26 1.3 Max -- -- -- +100 100 1.0 1.0 20 -- 3.9 1.6 0.04 -- 1.9 Unit V V V nA nA V V mA mS pF pF pF dB dB Test conditions ID = 200 A, VG1S = VG2S = 0 IG1 = +10 A, VG2S = VDS = 0 IG2 = 10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V ID = 100 A VDS = 5 V, VG1S = 5 V ID = 100 A VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 100 k VDS = 5 V, VG1 = 5 V, VG2S =4 V RG = 100 k, f = 1 kHz VDS = 5 V, VG1 = 5 V VG2S =4 V, RG = 100 k f = 1 MHz VDS = 5 V, VG1 = 5 V, VG2S =4 VRG = 100 k, f = 200 MHz
Rev.3.00 Aug 10, 2005 page 2 of 7
BB301C
Main Characteristics
Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 Gate 2 Gate 1 RG VG1
Drain A ID
Source
Equivalent Circuit Gate 2
Drain
Gate 1
Source
Application Circuit VAGC = 4 to 0.3 V BBFET VDS = 5 V RFC Output
Input
RG VGG = 5 V
Rev.3.00 Aug 10, 2005 page 3 of 7
BB301C
Maximum Channel Power Dissipation Curve
Channel Power Dissipation Pch (mW)
200 30 25 150 VG2S = 4 V VG1 = VDS
47 5k 68 6 k k
Typical Output Characteristics
Drain Current ID (mA)
20 15 10 5
100
50
k 82 k 0 10 k 20 k 10 15 k 180
RG =
220
k
0
50
100
150
200
0
1
2
3
4
5
Ambient Temperature Ta (C)
Drain to Source Voltage VDS (V)
Drain Current vs. Gate2 to Source Voltage
25
k
Drain Current vs. Gate1 Voltage
20
68 k
Drain Current ID (mA)
Drain Current ID (mA)
20
82 k
100 k
16
VDS = 5 V RG = 82 k
V
47
56
k
15
120 k
12
4
10
5
150 k 180 k RG = 220 k
VDS = VG1 = 5 V
3
8
4
VG2S = 1 V 1 2 3 4 5
0
1
2
3
4
5
0
Gate2 to Source Voltage VG2S (V)
Gate1 Voltage VG1 (V)
Drain Current vs. Gate1 Voltege
20 VDS = 5 V RG = 100 k 20
Drain Current vs. Gate1 Voltege
VDS = 5 V RG = 150 k
Drain Current ID (mA)
12
Drain Current ID (mA)
16
16
12 4V 3V
4
V
8
3
V
2V
8
4 VG2S = 1 V 0 1 2 3 4 5
4
VG2S = 1 V 0 1 2 3 4 5
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
Rev.3.00 Aug 10, 2005 page 4 of 7
V
2V
2V
BB301C
Forward Transfer Admittance vs. Gate1 Voltage
Forward Transfer Admittance |yfs| (mS) Forward Transfer Admittance |yfs| (mS)
30 25 20 15 10 5 VG2S = 1 V 0 1 2 3 4 5 2V VDS = 5 V RG = 82 k f = 1 kHz
4V
Forward Transfer Admittance vs. Gate1 Voltage
30 V DS = 5 V 25 RG = 100 k f = 1 kHz 20 15 2V 10 5 VG2S = 1 V 0 1 2 3 4 5
4V
3V
3V
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
Forward Transfer Admittance vs. Gate1 Voltage
Forward Transfer Admittance |yfs| (mS)
20 VDS = 5 V RG = 150 k f = 1 kHz
4V
Power Gain vs. Gate Resistance
30 25
16
3V
Power Gain PG (dB)
20 15 10 5 0 10 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 200 MHz 20 50 100 200 500 1000
12
2V
8
4 VG2S = 1 V 0 1 2 3 4 5
Gate1 Voltage VG1 (V)
Gate Resistance RG (k)
Noise Figure vs. Gate Resistance
4 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 200 MHz 30 25
Power Gain vs. Drain Current
Noise Figure NF (dB)
Power Gain PG (dB)
3
20 15 10 5 VDS = 5 V VG1 = 5 V VG2S = 4 V R = variable f = 200 MHz 5 10 15 20 25 30
2
1
0 10
20
50
100 200
500 1000
0
Gate Resistance RG (k)
Drain Current ID (mA)
Rev.3.00 Aug 10, 2005 page 5 of 7
BB301C
Noise Figure vs. Drain Current
4 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = variable f = 200 MHz 30 25
Drain Current vs. Gate Resistance
3
Drain Current ID (mA)
Noise Figure NF (dB)
20 15 10 5 0 10 VDS = 5 V VG1 = 5 V VG2S = 4 V 20 50 100 200 500 1000
2
1
0
5
10
15
20
25
30
Drain Current ID (mA) Gain Reduction vs. Gate2 to Source Voltage
60 50 40 30 20 10 4 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = 100 k f = 200 MHz
Gate Resistance RG (k)
Input Capacitance vs. Gate2 to Source Voltage
Input Capacitance Ciss (pF)
Gain Reduction GR (dB)
3
2
1
VDS = 5 V VG1 = 5 V RG = 100 k f = 1 MHz 1 2 3 4 5
0
0
1 2 3 4 5 Gate2 to Source Voltage VG2S (V)
Gate2 to Source Voltage VG2S (V)
Rev.3.00 Aug 10, 2005 page 6 of 7
BB301C
Package Dimensions
JEITA Package Code SC-82A RENESAS Code PTSP0004ZA-A Package Name CMPAK-4(T) / CMPAK-4(T)V MASS[Typ.] 0.006g
D e2 b1 B B e
A Q c
E
HE LP L
Reference Symbol Dimension in Millimeters
A xM
A S A b
L1
A3 e2 e
A2
A
l1
yS b b2 c c1 c A-A Section
A1 S b1 b3 c1 l1
b5
e1
A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q
Min 0.8 0 0.8 0.25 0.35
Nom
0.1 1.8 1.15
1.8 0.3 0.1 0.2
0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1
Max 1.1 0.1 1.0 0.4 0.5
0.15 2.2 1.35
b4 B-B Section Pattern of terminal position areas
2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 0.9
1.5 0.2
Ordering Information
Part Name BB301CAW-TL-E Quantity 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Aug 10, 2005 page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

▲Up To Search▲

Price & Availability of BB301CAW-TL-E

	To Download BB301CAW-TL-E Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .